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| RB715W / RB715F Diodes Schottky barrier diode RB715W / RB715F !Applications General purpose detection High speed switching !External dimensions (Units : mm) RB715W RB715F 1.250.1 2.10.1 +0.1 0.3 -0.05 0.150.05 0.1Min. (3) (3) 0.30.1 0.150.05 (All pins have the same dimensions) !Construction Silicon epitaxial planar ROHM : EMD3 EIAJ : SC - 75 JEDEC : SOT - 416 ROHM : UMD3 EIAJ : SC - 70 JEDEC : SOT - 323 !Circuit !Absolute maximum ratings (Ta=25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature 60 Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 30 200 125 -40~+125 Unit V V mA mA C C !Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT Min. - - - Typ. - - 2.0 Max. 0.37 1 - Unit V A pF IF=1mA VR=10V VR=1V, f=1MHz Conditions Note) ESD sensitive product handling required. 0.1Min. 3D 3D !Features 1) Small surface mounting type. (EMD3, UMD3) 2) Low VF and low IR 3) High reliability 1.60.2 1.00.1 +0.1 0.2 -0.05 (1) 0.5 0.5 (2) +0.1 0.2 -0.05 0.80.1 1.60.2 2.00.2 0.70.1 0.550.1 1.30.1 0.65 (1) 0.65 (2) 0.3 0.90.1 0.6 0~0.1 0~0.1 RB715W / RB715F Diodes !Electrical characteristic curves (Ta=25C) Typ. pulse measurement REVERSE CURRENT : IR (A) Ta=125C FORWARD CURRENT : IF (A) 100m Ta=125C 10m Ta=75C 10m Ta=75C CAPACITANCE BETWEEN TERMINALS : CT (pF) 1 100m 100 10 1m Ta=25C 1m 100 10 1 0 Ta=25C Ta=-25C 100n 1 10n Ta=-25C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1n 0 5 10 15 20 25 30 35 0.1 0 5 10 15 20 25 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 10 REVERSE RECOVERY TIME : trr (ns) 5 2 1 0.5 0.2 0.1 0 4 8 12 16 20 24 28 FORWARD CURRENT : IF (mA) Fig. 4 Reverse recovery time characteristics |
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